IRF510 Power MOSFET
0.45 د.ك
IRF510 third generation power MOSFETs
In stock
Description
IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 5.6A |
| Drain-Source Resistance (Rds On) | 540mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 8.3 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 43W |
