IRF9520 Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Product Technical Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS-100 V Gate-source voltage VGS ± 20
Continuous drain current VGS at 10 V TC = 25 °C ID-6.8
A TC = 100 °C -4.8
Pulsed drain current a IDM -27
Linear derating factor 0.40 W/°C
Single pulse avalanche energy b EAS 300 mJ
Repetitive avalanche current a IAR -6.8 A
Repetitive avalanche energy a EAR 6.0 mJ
Maximum power dissipation TC = 25 °C PD 60 W
Peak diode recovery dV/dt c dv/dt -5.5 V/ns
Operating junction and storage temperature range TJ, Tstg-55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300
Mounting torque 6-32 or M3 screw 10 lbf · in
1.1 N ·